bd181 ? bd182 ? bd183 18/10/2012 comset semiconductors 1/3 npn silicon transistor power linerar and switching applications bd181, bd182 and bd183 are silicon npn transistors intended for a wide variety of high power applications. typical applications includ e power switching circuits, audio amplifiers, solenoid drivers, and series and shunt regulators. absolute maximum ratings symbol ratings value unit v cbo collector-base voltage bd181 55 v bd182 70 bd183 85 v ceo collector-emittervoltage bd181 45 v bd182 60 bd183 80 v cer collector-emittervoltage r be =100 ? bd181 55 v bd182 70 bd183 85 v cex collector-emittervoltage v be =-1.5 v bd181 55 v bd182 70 bd183 85 v ebo emitter-base voltage 7.0 v i c collector current 15 a i b base current 7.0 a p t power dissipation @ t c < 25 150 w p tot power dissipation 117 w t j t s junction temperature 200 c storage temperature -65 to +200 thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case 1.5 c/w
bd181 ? bd182 ? bd183 18/10/2012 comset semiconductors 2/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i ebo emitter-base cutoff current v eb = 7 v, i c =0 bd181 - - 5.0 a bd182 - - bd183 - - i cbo collector-base cutoff current v cb =45 v t j =200c bd181 - - 2.0 ma v cb =60 v t j =200c bd182 - - 5.0 v cb =80 v t j =200c bd183 - - 5.0 v ceo(br) collector-emitter breakdown voltage (*) i c =200 ma, i b =0 bd181 45 - - v bd182 60 - - bd183 80 - - v ce(sat) collector-emitter saturation voltage (*) i c =3 a, i b =0.3 a bd181 - - 1.0 v i c =4 a, i b =0.4 a bd182 - - 1.0 i c =3 a, i b =0.3 a bd183 - - 1.0 v br(cer) collector-emitter breakdown voltage (*) i c =200 ma r be =100 ? bd181 55 - - v bd182 70 - - bd183 85 - - f hfe collector-emitter breakdown voltage (*) v ce =4.0 v, i c =3.0 a bd181 15 - - khz bd182 bd183 h fe static forward current transfer ratio (*) v ce =4.0 v, i c =3.0 a bd181 20 - 70 - v ce =4.0 v, i c =4.0 a bd182 20 - 70 v ce =4.0 v, i c =3.0 a bd183 20 - 70 (*) pulse width 300 s, duty cycle 2.0%
bd181 ? bd182 ? bd183 18/10/2012 comset semiconductors 3/3 mechanical data case to-3 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 11 13.10 b 0.97 1.15 c 1.5 1.65 d 8.32 8.92 f 19 20 g 10.70 11.1 n 16.50 17.20 p 25 26 r 4 4.09 u 38.50 39.30 v 30 30.30 pin 1 : base pin 2 : emitter case : collector
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